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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC2078 description collector-emitter voltage- :v cer = 75v(min) ;r be =150 collector current- :i c =3a applications 27mhz rf power amp lifier applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 80 v v cer collector-emitter voltage r be =150 75 v v ebo emitter-base voltage 5 v i c collector current-continuous 3 a i cm collector current-peak 5 a collector power dissipation @ t a =25 1.2 p c collector power dissipation @ t c =50 10 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC2078 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =0.1ma; i b = 0 80 v v (br)cer collector-emitter breakdown voltage i c =0.1ma; r be =150 75 v v (br)ebo emitter-base breakdown voltage i e =0.1ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c =1a; i b = 0.1a 0.6 v v be (sat) base-emitter saturation voltage i c =1a; i b = 0.1a 1.2 v i cbo collector cutoff current v cb = 40v ; i e = 0 10 a i ebo emitter cutoff current v eb = 4v; i c = 0 10 a h fe dc current gain i c = 500ma ; v ce = 5v 25 200 c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 45 60 pf f t current-gain?bandwidth product i c = 500ma; v ce = 10v 100 mhz p o output power 4.0 w power efficiency v cc = 12v;p in =0.2w, f=27mhz 60 % ? h fe classifications b c d e 25-50 40-80 60-120 100-200 isc website www.iscsemi.cn 2 |
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